内腔接触氧化限制型垂直腔面发射激光器小信号调制特性研究

Study on the Small Signal Modulation Characteristic of Internal-Contact Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

建立了一种适用于多量阱垂直腔面发射激光器(VCSEL)的多层速率方程模型。在理论与实验基础上,对器件进行小信号分析,得到了光子密度、载流子俘获、逃逸和隧穿时间等关键参数对VCSEL频率响应特性的影响。结果表明VCSEL调制带宽会随着输出功率增大而变宽。并进一步研究了内腔接触氧化限制型VCSEL的寄生电参数及其寄生电路,对其小信号频率响应进行了模拟分析。

A rate equation model of multi-quantum wells vertical-cavity surface-emitting laser （VCSEL） is presented after theoretical analysis. The effects of photon density and the carrier capture-escape-tunnel time on the frequency response of VCSEL are simulated by the small signal analysis. The results both of simulation and experiment show that the modulation bandwidth of VCSEL is broadened with the power increasing. In addition, we simulate the small signal frequency response of the parasitic circuit of internal-contact oxide-confined VCSEL after analyzing its parasitic parameters.