摘要
采用射频磁控溅射制备了不同Cu掺杂浓度的ZnO薄膜.以X射线衍射、扫描电镜等对薄膜的结构和形貌进行了表征,XRD和SEM测试结果显示Cu掺杂量为5.0 at.%时,Zn0.95Cu0.05O薄膜呈纳米柱状结构.同时也对薄膜的光致发光(PL)进行了研究.结果表明,406 nm的发光峰源于带边自由激子电子的复合,440 nm的发光峰则和薄膜中的锌间隙Zni缺陷有关.
Cu-doped ZnO films were prepared by radio frequency (RF) magnetron sputtering. The structure and morphology of films were studied using X-ray diffraction (XRD) and scanning electron microscope(SEM) while optical properties by photo-luminescence (PL) spectra. XRD and SEM results indicate that ZnO films doped with moderate Cu dopant 5.0 at. % can obtain wurtzite structure with nanorods aligned perpendicularly to the substrate surface. 406 nm and 440 nm peaks due to free exciton recombination and structural defects such as Zn interstitials of films.
出处
《苏州大学学报(自然科学版)》
CAS
2009年第2期68-71,共4页
Journal of Soochow University(Natural Science Edition)
基金
国家自然科学基金资助项目(10275047
10575073)