射频磁控溅射法低温制备ZnO∶Zr透明导电薄膜及特性研究

Growth and Properties of Transparent Conducting ZnO∶Zr Films by RF Magnetron Sputtering at Low Temperatures

利用射频磁控溅射法在室温水冷玻璃衬底上制备出了可见光透过率高、电阻率低的掺锆氧化锌(ZnO∶Zr)透明导电薄膜。讨论了薄膜厚度对ZnO∶Zr薄膜结构、形貌、光电性能的影响。实验结果表明,厚度对ZnO∶Zr薄膜的形貌和电学性能有很大影响。SEM和XRD研究结果表明,ZnO∶Zr薄膜为六角纤锌矿结构的多晶薄膜,具有垂直于衬底方向的C轴择优取向。当厚度为300nm时,薄膜的电阻率具有最小值1.77×10-3Ω.cm。所制备薄膜具有良好的附着性能,其可见光区平均透过率超过92%。

The microstructures and properties of the transparent conducting ZnO：Zr films, deposited by RF magnetron sputtering on water-cooled glass substrates at room temperature,were characterized with X-ray diffraction （XRD）, scanning electron microscopy （SEM） and conventional probes. The results show that the polycrystalline ZnO： Zr films consist of hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate, and that the film thickness significantly affects the morphology and electronic properties of the films. For instance, the film with a thickness of 300nm has the lowest resistivity, 1.77× 10^-3·Ω cm. All the films have a fairly high transmittance with strong adhesion at the interface of the films and the substrates.