聚合物P3HT在不同退火温度下的空穴传输特性

Hole transport in polymer P3HT with different annealing temperatures

运用交流阻抗方法系统研究了单空穴注入型器件ITO/PEDOT/P3HT/Ag(P3HT:poly(3-hexylthiophene))在多种退火温度下的电容-频率变化关系,推算出样品中相应条件下的空穴迁移率,发现退火温度对空穴迁移率有明显影响,未经过退火的样品空穴迁移率为10-4cm2/Vs数量级,迁移率数值基本不随电场强度的改变而变化,退火后样品的空穴迁移率有明显提高,约为10-3cm2/Vs数量级,此时,空穴迁移率受电场影响相对较大.

Hole only devices were fabricated with the structure of ITO/PEDOT/P3HT （poly（3-hexylthiophene））/Ag. The capacitance- frequency characteristics of samples annealed at different temperatures were investigated by admittance spectroscopy technique. Hole mobilities were calculated and it was found that the hole mobility could be pronouncedly influenced by annealing. The hole mobility was enhanced to the 10^-3 cm^2/Vs order after annealing, while the hole mobility of the unannealed sample was just of 10^-4cm^2/Vs order. The hole mobility of the annealed sample is almost unchanged under different electric field. In contrast, the hole mobility of the annealed sample showed relatively significant change with the electric field.