摘要
利用无规分形对钽电容中MnO2/Ta2O5和Ta/Ta2O5界面的SEM形貌进行了图像处理.根据得出的分形维数值,验证了被膜过程为化学反应控速,阳极氧化击穿过程为扩散控速.
The concept of irregular fractal dimension is used to dealing with the SEM image of the interface of Ta/Ta2O5 or Ta2O5/MnO2 in capacitor films. According to the value of fractal dimension, it is suggested that chemical reaction be the ratecontrolling stepin the film coatingprocess, but diffusion be the controlling step during the anodic puncture.
出处
《化工冶金》
CSCD
北大核心
1998年第2期157-160,共4页
关键词
分形维数
钽电容
图像处理
线性回归
Fractal dimension, Tantalum capacitor, Image analysis, Linear regression