SiGe合金单晶生长研究

Study on SiGe Single Crystal Growth

通过改进SiGe单晶生长热场和Ar气流动方式,并采用合适的生长速度,优化调整SiGe单晶生长控制工艺参数,有效控制了SiGe单晶的位错密度。采用直拉(CZ法)在国产TDR-62Si单晶炉上,采用150 mm密闭式热系统,生长出了Ge质量分数为9.79%～12.92%、Φ为50～60mm的SiGe单晶。可应用于X射线单色器、探测空间γ射线的透镜及热电器件,还可用作部分光电器件和量子阱器件SiGe同质外延生长的衬底。

By improving the SiGe single crystal heater system and argon flow mode, adopting appropriate pulling rate, and optimizing growth parameters, dislocation density of SiGe single crystal was effectively controlled. SiGe single crystal with diameter of 50～ 60 mm, Ge mas fraction up to 9.79% ～ 12.92% was grown by Czochralski （CZ） method using TDR-62 Si furnace （made in China） and 150 mm closed heater system. The SiGe single crystal is applicable to X-ray monochromator, lens for detecting space gamma ray and thermoelectric devices, and also applicable to SiGe homoepitaxial suhstrate for some optoelectronic devices and quantum well devices.