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TEM样品制备辅助研究介质层可靠性失效机理 被引量：4

TEM Sample Preparation Assisted Investigation on Dielectrics Reliability Failure Mechanism
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摘要 研究了TEM样品制备条件对Cu/低k制程ILDTDDB失效样品及含更低介电常数(k=2.7)介质层样品的TEM成像质量的影响,发现在一定的样品制备条件下低介电常数介质的疏松特性可在TEM成像时得到增强显示,进而揭示了某Cu/低k制程ILDTDDB可靠性失效样品的失效机理为芯片制造过程中介质层沉积温度异常导致其疏松特性增强,介电常数降低,从而导致其电绝缘性能下降而引起TDDB可靠性测试项目失效。 The effects of TEM sample preparation conditions on the TEM sample imaging quality of Cu / low-k manufacturing process and ILD TDDB failure samples even with lower dielectric constant （k = 2.7） dielectric layer were studied. It is found that the porous property of low-k material can be enhanced under certain sample-preparation conditions. The results reveal that the ILD TDDB failures could be related to the poor dielectrics. Namely, the dielectric layer could become loose due to abnormal temperature variations during film deposition, and a smaller k value of the dielectrics can lead to TDDB failures.
作者 李明 段淑卿 郭强 简维廷
机构地区 中芯国际集成电路制造上海有限公司
出处 《半导体技术》 CAS CSCD 北大核心 2009年第5期498-501,共4页 Semiconductor Technology
关键词 透射电子显微镜 样品制备 低介电常数材料 介质层TDDB可靠性测试 TEM sample preparation low- k dielectrics ILl） TDDB
分类号 TN306 [电子电信—物理电子学]
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参考文献6

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同被引文献15

  • 1陈雷明,李培刚,符秀丽,张海英,L.H.Li,唐为华.FIB快速加工纳米孔点阵的新方法[J].物理学报,2005,54(2):582-586. 被引量：4
  • 2戴嘉维,孔明.薄膜截面的TEM样品制备[J].理化检验（物理分册）,2006,42(5):239-241. 被引量：5
  • 3SRIVASTAVA N, BANERJEE K. Interconnect challenges for nanoscale electronic circuits [J].J of the Minerals, Metals and Materials Society, 2004,56 ( 10) : 30-31 .
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  • 5JIN C, LIN S, WETZEL J T. Evaluation of ultra-low- k dielectric materials for advanced interconnects [J]. J of Electronic Materials, 2001,30 (4) : 284-289.
  • 6TSU R, MCPHERSON J W, MCKEE W R. Leakage and breakdown reliability issue associated with low-k dielectrics in a dual-damascene Cu process [C]//Proc of IEEE 38th Int Reliability Physics Symp. San Jose, USA, 2000 : 348-352.
  • 7KATO N I, KOHNO Y, SAKA H. Side-wall damage in a transmission electron microscopy specimen of crystalline Si prepared by focused ion beam etching [J]. J of Vacuum Science Technology:A, 1999,17 (4) : 1201-1204.
  • 8ZHENG Y, ZHU W, HUANG T, et al. Plasma enhanced CVD low-k black diamond film formation process for 65 nm technology node [ C ]// Proc of Advanced Metallization Conf. Montreal, Canada, 2003 : 543-547.
  • 9王贞.对TEM原理及应用的研究[D].天津:天津大学,2010.
  • 10褚维群,郭炜.TEM样品制备中离子束对样品的损伤分析[J].计算机技术与发展,2008,18(2):223-225. 被引量：3

引证文献4

二级引证文献13

半导体技术
2009年 第5期

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