基于腔面非注入技术的大功率半导体激光器

High Power Laser Diode with Non-Injection Regions Near the Facet

采用腔面电流非注入技术,提高了808nm半导体激光器灾变性光学损伤(COD)阈值。通过腐蚀GaAs高掺杂层的方法,在半导体激光器腔面附近形成电流非注入区,以此来减少腔面处的载流子注入。载流子注入水平的降低,减少了腔面处非辐射复合的发生,因而提高了激光器的灾变性光学损伤阈值。应用电流非注入技术制作的器件的最大输出功率达到3.7W;而应用常规工艺制作的器件的最大输出功率为3.1W。同常规工艺相比,采用该技术使器件的最大输出功率提高了近20%。

The technology of non-injection regions for improving the catastrophic optical damage （COD） level of the 808 nm laser diode was introduced. By etching p＋-GaAs, non-injection regions was formed near the facets, where the injection current was blocked. The non-injection regions can reduce carriers injecting to facts. As a result that the rate of the nonradiative recom- bination is reduced, and the COD level is higher than before. The maximum output power of laser diodes with non-injection regions is 3.7 W, and that of the laser diodes without non-injection regions is 3.1 W. Compared with the conventional laser diodes, the maximum output power level is improved nearly 20 % for the laser diodes with non-injection regions by etching p ＋ -GaAs.