硫分压对光吸收层CuInS_2薄膜性能的影响

Effect of Sulfur Partial Pressure on Properties of CuInS_2 Absorber Films

在不同硫分压r(r=Sn/[N2+Sn])下,采用Cu-In预制膜硫化法制备了CuInS2薄膜。用扫描电子显微镜、X射线衍射仪、霍尔测试仪、紫外-可见光分光光度计对薄膜的表面形貌、结构、电学、光学性能进行了表征分析。结果表明:随着r增加,薄膜的结晶质量提高,当r=1/2时,晶粒大小如一,粒度保持在1μm左右,沿[112]晶向择优生长,载流子浓度为5.6×1016cm-3,光学带隙在1.53eV左右。

CuInS2 （CIS） films were prepared by electrodepositing-sulfurization at the different partial pressures of sulfur r（r=Sn/[N2＋Sn]）. Their surface morphologies, crystalline structure, electrical and optical properties were characterized by scanning electron microscopy （SEM）, X-ray diffraction （XRD）, Hall system and ultraviolet-visible （UV-VIS） spectraphotometers, respectively. The results show that the crystalline quality is improved with increasing of r. It is found that the CuInS2 film sulfurized at r=l/2 with the fairly large grain size of about 1um has （112） preferred orientation, the carrier concentration is 5.6×10^16cm^-3, the optical band gap is about 1.53 eV.