磁控溅射制备AlN薄膜的蒙特卡罗模拟

Monte-carlo Simulation of Magnetron Sputtering of AlN Thin Tilms

应用蒙特卡罗程序TRIM对Ar+轰击AlN的微观过程进行了模拟。对不同能量以及不同角度下Ar+轰击AlN引起的溅射产额进行了系统的研究。随着入射离子能量的逐渐增加,AlN的溅射产额呈上升趋势。AlN的溅射产额随入射角增加而逐渐升高,在75°左右达到峰值,超过75°后,溅射产额急剧下降。实验发现垂直入射时和斜入射时,Al和N两元素的分溅射产额的比值变化规律有着明显的不同。

The monte-carlo code TRIM has been used to simulate the sputtering yield by Ar＋ at different energy and diffrent angle. The sputtering yield of AlN increses with energy. The sputtering yield of AIN enhances and reaches to the max value following the incidence angle of ion gradually increasing from O°to about 75°. When the incidence angle exceed 75° , the sputtering yield decreases intensively. The ration of the partial yield Al to that of N is totally different for the normal and oblique incidence.