硒蒸气硒化法制备CIGS薄膜的影响因子(Ⅱ) 预制膜对CIGS薄膜结构和形貌的影响

Se VAPOR SELENIZATION METHOD PARAMETERS FOR DEPOSITION OF CIGS FILMS(Ⅱ) Influence of Precursor Films on Microstructure and Morphologies of CIGS Films

采用中频交流磁控溅射方法,在Mo层上沉积了多层和双层CuInGa(CIG)预制膜,采用固态硒化法制备获得了Cu(In_(1-x)Ga_x)Se_2(CIGS)吸收层薄膜,考察了预制膜对CIGS薄膜结构和形貌的影响。采用SEM和EDS观察和分析了薄膜的表面形貌和成分,采用XRD表征了薄膜的组织结构。结果表明,CIG多层预制膜由Cu_(11)In_9、CuIn和In相组成,CIG双层预制膜由Cu_(11)In_9、CuIn、In和CuGa相组成。通过硒化CIG双层和多层预制膜,所获得的CIGS薄膜均为黄铜矿相结构,薄膜具有(112)面的择优取向。当硒化时间为17min时,通过硒化CIG双层预制膜所获得的CIGS薄膜出现了上层致密,下层疏松的结构,延长硒化时间为25min,CIGS薄膜变得致密。

CulnGa （CIG） precursors were deposited on the substrate of Mo-coated glass with middle frequency magnetron sputtering by ahemately sputtering Culn and CuGa targets. Then the Cu（In1-x Gax ）Se2 （CIGS） absorbers were obtained by selenizing the CIG precursors in the atmosphere of Se vapor and carrier gas of Ar. The CIGS films were characterized with X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy to evaluate the microstmcture, morphology, and composition, respectively. The results shown that the CIG multilayer precursors are composed of Cu11 In9, CuIn and In phases, while the CIG bilayer precursors are composed of Cu11 In9, CuIn, In and CuGa phases. The micro- structures of the CIGS films selenized from CIG multilayer and bilayer precursors are mainly of chalcopyrite with a （112） preferred orientation. When the selenization time is 17min, the CIGS film selenized from CIG bilayer precursor contains a compact top layer and a loose bottom layer. By increasing the selenization time to 25min, the CIGS film turns to be compact.