工艺条件对柔性衬底ITO薄膜光电性能的影响

Effect of technological conditions on the electrical and optical properties of flexible ITO films

采用直流磁控溅射法在柔性衬底上镀制ITO透明导电薄膜,全面研究了薄膜厚度、氧气流量、溅射速率、溅射气压和镀膜温度等工艺条件对ITO薄膜光电性能的影响。结果表明,当膜厚大于80nm、氧氩体积比为1∶40、溅射速率为5nm/min、溅射气压在0.5Pa左右、镀膜温度为80～160℃时,ITO薄膜的光电性能较好,其电阻率小于5×10–4?·cm、可见光透光率大于80%。

ITO transparent conductive thin films were deposited on flexible substrates using DC magnetron sputtering method. The effects of technological conditions （such as the film thickness, the oxygen flux, the sputtering speed, the sputtering pressure and the temperature etc.） on the electrical and optical properties of ITO films were studied comprehensively. The results show that an optimum condition to prepare ITO films can be obtained, in which the film thickness is above 80 nm, the ratio of O2 to Ar is 1：40, the sputtering speed is 5 nm/min, the sputtering pressure is about 0.5 Pa and the temperature is in a range of 80- 160℃. ITO thin films prepared under the optimum condition exhibit better electrical and optical properties, with resistivity below 5× 10^- 4 Ω· cm and visible light transmissivity beyond 80%.