单晶硅片化学机械抛光材料去除特性

Material removal characteristic of silicon wafers in chemical mechanical polishing

根据化学机械抛光(CMP)过程中硅片表面材料的磨损行为,建立了硅片CMP时的材料去除率模型,设计了不同成分的抛光液并进行了材料去除率实验,得出了机械、化学及其交互作用所引起的材料去除率.结果表明,磨粒的机械作用是化学机械抛光中的主要机械作用,磨粒的机械作用与抛光液的化学作用交互引起的材料去除率是主要的材料去除率.

A material removal rate （MRR） model of silicon wafers was built based on friction and abrasion behaviors in wafer chemical mechanical polishing （CMP）. Different slurries were designed for CMP tests of MRR. MRR results were obtained from the mechanical action of abrasives, the chemical action of slurry, and the interaction action between them. From the results it is concluded that the mechanical action produced by abrasives is the main mechanical action in wafer CMP process, and the MRR is mainly produced by the interaction between the mechanical action and the chemical action.