摘要
以普通长沟道MOSFET的电流模型为基础，推导出RG—MOSFET一级近似下电流模型的解析表达式，并对其物理机制进行了较详细的分析讨论。
The analytical expressions of the first approximation curret model was derived for RG-MOSFET on the basis of the current model of the general long channel. And the physical mechanism was discusscd in dctail.
出处
《微处理机》
1998年第2期61-64,共4页
Microprocessors
