一种新颖的高性能带隙基准的设计与分析

Design and Analysis of a Novel High Performance Bandgap Reference

提出了一种新颖的分段线性补偿带隙基准,该补偿技术通过巧妙地运用带隙输出电压与三极管开启电压VBE的关系来实现。电路设计中,考虑了基准电压的电源抑制特性、线性调整率、电路的稳定性、功耗、芯片面积等各方面的因素,使得该电路很适合工程应用。全电路由BiCMOS工艺实现,并通过HSPICE仿真。结果表明,基准输出电压约1.169V,有效温度系数仅为2.1×10-6/℃;室温下,电源抑制比为63dB@1kHz,功耗70μW(3V电源)。

A novel piecewise-linear compensated bandgap reference source was presented. In this circuit, relationship of bandgap voltage with bipolar transistor＇s on-voltage was utilized to obtain compensated voltage in high temperature range. With PSR, line regulation, loop stability, power dissipation and chip area taken into consideration, the circuit was optimized for engineering application. Results from simulation based on BiCMOS process indicated that the circuit had a VREF of about 1. 169 V, a temperature coefficient of 2. 1×10^-6℃, a PSR of 63 dB @ 1 kHz at room temperature, and a power dissipation of 70μW with 3 V supply voltage.