SOI-LIGBT N-Buffer参数的研究

Study on N-Buffer Parameters of SOI-LIGBTs

基于SOI-LIGBT(Silicon-on-Insulator-Lateral Insulated Gate Bipolar Transistor),采用二维器件模拟软件Tsuprem4和Medici,仿真N-buffer的注入剂量和结深的变化对器件击穿电压和开态电流能力等参数的影响。通过分析,得出实现击穿电压、开态电流和关断时间折中的一般方法和优化N-buffer设计的一般结论。这不仅适用于该器件的设计,而且对其他LIGBT及纵向IGBT器件的N-buffer设计也有所裨益。

Based on SOI-LIGBT, effects of different implantation doses and junction depths of N-buffer on breakdown voltage and on-state current capacity were simulated with two-dimensional device simulators： Tsuprem4 and Medici. A method to achieve tradeoff between breakdown voltage, on-state current capacity and turn-off time was developed. A general conclusion was made on the optimized N-buffer design, which is also applicable for N-buffer design of other LIGBTs and vertical IGBT devices.