锑化物半导体材料与器件应用研究进展

Application Research and Development in Sb-Based Ⅲ-Ⅴ Compound Semiconductor Material and Device

窄禁带的锑化物半导体材料近年来被国际上公认为第三代超高速、超低功耗集成电路和第三代焦平面阵列红外探测器的首选材料体系。概述了它们独特的能带结构和物理特性及其为各种新型功能器件的研发提供的极大发展空间,指出该材料成为美国、日本、德国、以色列等发达国家竞相开展研究的热点领域。概要介绍了锑化物半导体材料的制备工艺、存在的问题和器件应用的一些最新成果,给出了今后该领域的发展趋势。

In recent years, the narrow bandgap antimonide based compound semiconductors （ABCS） are widely regarded as the first candidate material for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. It is summerized that due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced and the developing trends is given.