基于TCAD工具的超突变结变容二极管设计

Design of Hyperabrupt Varactor Diode Using TCAD Tools

根据超突变结变容二极管设计和工艺特点,报道了利用SILVACO公司工艺模拟软件Athena、器件模拟软件Atlas等完成超突变结变容二极管的几何结构、浓度分布、工艺参数、电学参数等的设计,根据设计参数通过某型号Si超突变结变容二极管生产情况验证设计参数和电参数的吻合情况,改进实际工艺参数和模拟参数的容差系数;分别利用离子注入-扩散法和双离子注入法完成器件工艺制作,提高了的工艺重复性和成品率。采用TCAD技术大大缩短了研制周期、降低了费用。

According to the design and technology features of hyperabrupt varactor diode, a hyperabrupt varactor diode designed with TCAD of SILVACO Ine was reported. Fabrication process tool, Athena and the Atlas were used to simulate geometry structure, doping distribution, fabrication and electrical parameters. According to the production validation, the agreement of the design parameters, the positive correlation between simulation results and practically parameters were validated, and the actual process parameters and simulation parameters of tolerance factor were improved. The repeatability of the process and yield were improved by implant-diffuse process and implant-implant process. The development and production cycle are shorten and the cost is reduced greatly with TCAD tools.