摘要
提出了采用紧束缚方法计算电子联合状态密度,并利用由实验测得的半导体化合物MZ,NZ及NW的介电常数,计算半导体合金M_xN_(1-x)W_yZ_(1-y)的介电常数虚部的半经验方法,进而利用此方法具体地计算了与InP晶格匹配的Ga_xIn_(1-x)P_vAs_(1-y)的介电常数虚部。
A Semi-empirical method for calculating the dielectric constants of semiconduc-tor alloys M_xN_(1-x)W_yZ_(1-y) in terms of joint densities of electronic states computedin tight-binding approach and experimental data of dielectric constants of semicon-ductors MZ, NZ and NW is suggested. This method is applied to calculate theimaginary parts of dielectric constants of Ga_xIn_(1-x)P_yAs_(1-y) lattice-matched to InP.
出处
《复旦学报（自然科学版）》
CAS
CSCD
北大核心
1989年第3期255-259,共5页
Journal of Fudan University：Natural Science
基金
国家自然科学基金资助课题
关键词
半导体
合体
介电常数
紧束缚
方法
dielectric constant, band structure, refractivity, transition
joint density of state, tight-binding method.
