摘要
提出硅基片生长薄膜的薄膜电阻的测试方法,利用方形四探针技术实现对较小硅基片上生长钴的薄膜电阻的测量,完成不同生长厚度下三片薄膜硅片的薄膜电阻测试工作,得出测试结果较可靠、合理的结论,同时对提高测试实验精度的影响因素进行分析。
A test method is put forward for the resistance of growth of thin films on silicon chip, the resistance is tested for growth of cobalt films on a smaller silicon using a square four-probe technique. The three resistances of thin-film silicon with different thickness growth are tested. The reliable and reasonable conclusions of the measurement results are gotten. At the same time ,the influencing factors for improving the accuracy of testing experiment are analysised.
出处
《现代仪器》
2009年第3期27-29,26,共4页
Modern Instruments
基金
国家自然科学基金项目(项目批准号:J0721027)
关键词
方形四探针
硅基片
薄膜电阻
测试技术
Square four point probes Silicon chip Film resistance Testing Technology