磁控溅射法制备ITO薄膜的结构及光电性能

Microstructure and Optoelectrical Performance of ITO Film by DC Magnetron Sputtering

本文采用直流磁控溅射法在基板温度100℃、100%Ar气氛中制备了光电性能优良的铟锡氧化物(In2O3:SnO2=90:10,质量百分比)薄膜。利用XRD、AFM、SEM、多功能光栅光谱仪和四探针电阻测试仪对薄膜的结构、表面形貌、透光率和方阻进行了测定和分析,研究了溅射功率对薄膜透光率的影响。结果表明:ITO薄膜的方阻随溅射功率的增加而下降;经过热处理,ITO薄膜可见光透光率从60.4%增加到88.3%;ITO薄膜在360 nm到380 nm的紫光区域透光率最低,760 nm到800nm的红光区域透光率达到最高。

By direct current magnetron method using indium oxide target （ITO, In2O3：SnO2 = 90： 10, wt%）, highly transparent and conductive ITO could be successfully on glass substrate at 100℃. The crystal structure and surface shape of the film are analyzed by XRD, SEM and AFM. The light transmittance and resistance are measured by WGD-3 and ZS-82. Study splash power to the thin film deeply the influence of the light rate. The result manifest that the resistance declines along with the increment of the splash power. The light transmittance is obviously improved after annealing. To the purple light district of the 360 nm--380 nm, the light transmittance attains lowest. To the red light district of the 760 nm --800 nm, the light transmittance attains highest.