高分子辅助化学溶液沉积制备涂层导体CeO_2缓冲层

Polymer-Assisted Chemical Solution Deposition for the Preparation of CeO_2 Buffer Layer for Coated Conductors

分别采用两种高分子辅助化学溶液沉积方法,在双轴织构的NiW(200)合金基底上制备了涂层导体CeO2缓冲层。结果表明,制得的CeO2缓冲层双轴织构良好,表面无裂纹。比较两种不同的高分子辅助方法,利用聚甲基丙烯酸辅助制得的CeO2表面平整,均方根粗糙度在1μm×1μm的范围内仅为2nm,粗糙度远小于利用聚乙烯醇辅助沉积而得的CeO2缓冲层。

Two kinds of polymer addictives have been proposed to assist the deposition of CeO2 buffer layer on the bi-axially textured NiW （200） alloy substrate. The as-grown CeO2 yielded excellent bi-axial texture as well as crack-free surface morphology. Effects of different addictives on the quality of final CeO2 have been investigated, which revealed that CeO2 yielded by polymethacrylic acid （PMAA） assistance displayed a smooth surface with a root mean square roughness of around 2 nm over a surface cut-out of 1 μm× 1μm, which was far inferior compared with that of the CeO2 film deposited by polyvinyl alcohol （PVA） assistance.