摘要
分别采用两种高分子辅助化学溶液沉积方法,在双轴织构的NiW(200)合金基底上制备了涂层导体CeO2缓冲层。结果表明,制得的CeO2缓冲层双轴织构良好,表面无裂纹。比较两种不同的高分子辅助方法,利用聚甲基丙烯酸辅助制得的CeO2表面平整,均方根粗糙度在1μm×1μm的范围内仅为2nm,粗糙度远小于利用聚乙烯醇辅助沉积而得的CeO2缓冲层。
Two kinds of polymer addictives have been proposed to assist the deposition of CeO2 buffer layer on the bi-axially textured NiW (200) alloy substrate. The as-grown CeO2 yielded excellent bi-axial texture as well as crack-free surface morphology. Effects of different addictives on the quality of final CeO2 have been investigated, which revealed that CeO2 yielded by polymethacrylic acid (PMAA) assistance displayed a smooth surface with a root mean square roughness of around 2 nm over a surface cut-out of 1 μm× 1μm, which was far inferior compared with that of the CeO2 film deposited by polyvinyl alcohol (PVA) assistance.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2009年第A01期411-414,共4页
Rare Metal Materials and Engineering
基金
国家自然科学基金(50672078)
国家杰出青年基金(50588201)
国家"973"项目(2007CB616906)