摘要
采用直流磁控溅射法在PZT基体上溅射沉积NiTi SMA薄膜,而制备出PZT基NiTi SMA/PZT异质复合材料。研究了溅射工艺参数与晶化温度对NiTi SMA薄膜相组成及SMA/PZT异质复合材料膜/基间结合状态的影响规律。结果表明,为保障NiTi SMA薄膜的晶体颗粒均匀、结构致密,膜/基间成分交换范围小及结合紧密,制备NiTi SMA/PZT异质复合材料的适宜工艺为:于基体温度150℃、氩气压强0.7Pa条件下溅射沉积NiTi SMA薄膜,再经600℃二次晶化处理。显微观察发现,NiTi SMA薄膜与PZT基体之间以化学方式,而非物理方式结合。
The NiTi SMA/PZT heterogeneity composite based on PZT was prepared by DC magnetron sputtering. The effect of the sputtering parameter and crystallization temperature on the microstructure of the NiTi SMA/PZT heterogeneity composite was studied. The suitable processing condition of preparing NiTi SMA/PZT heterogeneity composite are determined： the substrates temperature 150 ℃, Ar gas working pressure 0.7Pa, and crystallization temperature 600 ℃. The results show that the combination mode between the NiTi SMA film and the PZT substrate is not physical association but chemical combination.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2009年第A01期428-431,共4页
Rare Metal Materials and Engineering
基金
天津市科技支撑重点项目(07ZCKFSF02200)
