摘要
提出一个共源共栅结构的超宽带低噪声放大器。该电路基于台积电0.18μmCMOS工艺,工作在3GHz～5GHz频率下,用来实现超宽带无线电。仿真结果表明,该低噪声放大器有最大13.6dB的增益。整个频段噪声系数小于1.9dB。输入和输出反射损耗都小于-11dB。一阶压缩点在-15dBm左右。功耗为18.7mW。
An ultra-wideband low noise amplifier with cascode structure is presented in this paper.This circuit,based on TSMC 0.18μm CMOS technology,operating from 3 GHz to 5 GHz,is used to realize uhra-wideband radio.The simulation results indicate that the low noise amplifier provides a maximum gain of 13.6 dB, and noise figure of the whole spectrum is smaller than 1.9 dB. The input and output return losses are below -11 dB. The 1 dB compression point is about -15 dBm,and the power consumption is 18.7 mW.
出处
《电子技术应用》
北大核心
2009年第6期78-80,84,共4页
Application of Electronic Technique
基金
教育部新世纪优秀人才支持计划支持项目(A0160419950120)
