摘要
在ＮＨ３源ＧＳＭＢＥ生长的ＧａＮ中观察到较大的双轴张应变．随着张应变的增加光致发光谱带边峰展宽，Ｈａｌ测试得到的背景电子浓度增大．本文应用ＧａＮ的压电效应对此进行了解释．
Abstract Significant biaxial tensile strain is observed in GaN films grown by Gas Source
Molecular Beam Epitaxy using ammonia as nitrogen precusor. The strain broadens the band edge
emission peaks in photoluminesce spectra. And the background electron concentration increases
with the strain in the film, which is interpreted by a proposal model based on piezoeffect.
关键词
半导体
氮化镓
压电效应
载流子浓度
Carrier concentration
Molecular beam epitaxy
Piezoelectricity
