摘要
ＺｒＯ２·ＳｉＯ２·Ｐ２Ｏ５半导陶瓷是由ＺｒＯ２、ＳｉＯ２和Ｈ３ＰＯ４用高温固相反应制成．它的傅里叶红外吸收谱是由ＺｒＯ２和ＳｉＯ２的标准谱叠加而成．根据标准峰的位置分别计算出两种氧化物的四个基本声子能量．这些声子按照不同组合方式形成ＺｒＯ２·ＳｉＯ２·Ｐ２Ｏ５半导陶瓷的全部傅里叶红外吸收峰．半导陶瓷的喇曼背向散射峰也是由这些基本声子组合而成．对比四角和单斜ＺｒＯ２的喇曼特征谱线看出，在未掺杂和用Ｙ２Ｏ３或Ｎｂ２Ｏ５掺杂的半导陶瓷样品中，ＺｒＯ２的晶粒微结构分别属于单斜和四角对称晶系．
Abstract ZrO 2·SiO 2·P 2O 5 semiconductive ceramic is made of
ZrO 2, SiO 2 and H 3PO 4 by the solid phase reaction at high temperature. Its Fourier infrared
absorption spectrum is the overlap of standard ones of ZrO 2 and SiO 2. On the basis of the
standard peak sites, four fundamental phonon energies of two oxides are calculated
respectively. All the Fourier infrared absorption peaks of ZrO 2·SiO 2·P 2O 5
semiconductive ceramic, consist of the four elementary phonons by different combination.
Each Laser Raman backward scattering peak of ZrO 2·SiO 2·P 2O 5 semiconductive
ceramic sample is made up of these phonons too. As comparing with Laser Raman
characteristic spectra of tetragonal and monoclinic ZrO 2, the grain microstructures of ZrO 2 in
the undoped and Y 2O 3 doped or Nb 2O 5 doped samples are separately belonged to
monoclinic and tetragonal symmetrical systems.
