摘要
本文在传统的掩埋新月型激光器的基础上，提出了一种１．３μｍＩｎＧａＡｓＰ／ＩｎＰ大功率激光器结构－选择性质子轰击掩埋新月型激光器（ＳＰＢ－ＢＣ）．文中对其制作过程及特性进行了详细的描述和测量．它的最低阈值电流小于１０ｍＡ，对于ｎ－ＩｎＰ衬底，它的最大输出功率为６５ｍＷ，ｐ－ＩｎＰ衬底，最大输出功率为８０ｍＷ．在重复频率为２．１ＧＨｚ时，测得光脉冲的半宽度（ＦＷＨＭ）为１８ｐｓ．
Abstract Fabrication
procedure and characteristics of a novel structure of InGaAsP/InP laser are described. The lowest
threshold current of less than 10mA, the maximum cw output power of 65mW for n type substrate,
and 80mW for p type substrate have been achieved. The optical pulse width of less than 18ps is
obtained at a repetition rate of 2 1GHz.
基金
吉林省科委资助
