摘要
本文提出一种原位测定ＧａＡｓＭＥＳＦＥＴ沟道中掺杂浓度分布和迁移率分布的新方法．建立了测试模型．推导出测量计算公式．用最优化方法处理实验数据，由机助测试系统和计算程序可方便地获得结果．
Abstract On Basis of optimization technique, a new method to determine both doping and drift
mobility profiles ( n(x) and μ(x )) in GaAs MESFET is presented. A model to determine these
profiles is developed. Optimization technique is used in the data treatment. The computer aided
measurement system equipped with analytic program of this method is capable of providing
correct results quickly.
