摘要
本文研究了一种新的、具有实际应用价值的硅片吸除技术．该技术包括利用ＰＥＣＶＤ法在腐蚀硅片背面沉积４００～８００ｎｍ厚的非晶硅膜，再经过６５０～６８０℃温度的热处理，使沉积膜与硅片结合更牢固，之后，把硅片进行抛光．结果表明，该技术能有效地消除硅抛光片表面的雾缺陷，同时硅片表面层少子寿命可提高２～４倍．
Abstract A novel back side gettering
technique is studied. The technique consists of applying a film of a Si∶H with thickness of 400
￣800nm to the back side of a silicon wafer、annealing at 650￣680℃ and then polishing the
surface of the silicon wafer.The technique is found to be effective for eliminating the defects of
“fog”, meanwhile the minority carrier lifetime can be improved 2￣4 times.
