大功率外腔半导体激光器的研究

High Power External Cavity Semiconductor Laser

介绍了一种用光栅作为外反馈元件，采用普通大功率半导体激光器管芯作为增益介质的方案。实验中实现了输出功率大于７０ｍＷ，边模抑制比大于３０ｄＢ。

The high power external cavity semiconductor laser has become an important optoelectronic device. In this paper, using a grating as the feedback component, a laser of single frequency output over 70 mW and side mode suppression over 30 dB is reported. Meanwhile, some parameters which influence the performance of the high power external cavity laser are analyzed.