摘要
本文介绍了LiNbO_3抽头延迟线(TDL)外接p^+n二极管阵列结构的声表面波(SAW)存贮相关卷积器,器件的中心频率为30MHz,卷积效率为-54dBm,存贮相关效率为-76dBm,信号存贮时间大于70ms。文中讨论了杂波产生的原因及其抑制,以及二极管阵列少子寿命与存贮时间的关系,计算了相关输出与参考信号和读信号的关系,结果表明这种结构的器件是双线性的,文中还对这种结构器件的设计及优化提出了建议。
LiNbO_3 tapped-delay-line(TDL)/p^+ n diode array surface acoustic wave(SAW)memory correlator is introduced. The central frequency of the device is 30MHz, with the convolution efficiency and storage correlation efficiency of -54dBm and - 76dBm, respectively. The storage time is more than 70ms. The generation and cancellation of spurious signal are discussed, and the dependence of storage time on minority carrier lifetime is also discussed. The dependence of correlation output on reference signal and read signal are calculated. The results show that our device is 'bilinear'. Suggestions for the design and optimization of SAW memory correlator of this structure are given.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1998年第6期26-30,共5页
Acta Electronica Sinica
关键词
存贮相关卷积器
SAW
声表面波
抽头延迟线
Memory correlator
Diode array
Minority carrier lifetime
Surface acoustic wave
Tapped-delay-line
Electron irradiation