摘要
应用数值方法来解CdTe/CdS异质结J-V特性,进而得出其二极管理想因子、激活能以及异质结空间电荷区党度。结果表明,CdTe一侧空间电荷区复合是主导CdTe/CdS异质结传输电流的主要机制。说明在CdTe基太阳能电池制造中,控制多晶薄膜化学缺陷对提高电池能量转换效率的重要意义。
Using a numerical method, the J-V characteristics of n-CdS/p-CdTe heterojunction solar cells have been solved, deducing the diode ideality factor, activation energy and space charge region width. The results indicate that thecurrent of CdS/CdTe heterojunction is dominated by the depletion region recombination mechanism- The theoretical calculation further confirms the importance ofthe study of CdTe chemical defects in improving CdTe based solar cell performances.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第2期131-138,共8页
Research & Progress of SSE
关键词
二极管理想因子
复合模型
多晶薄膜
太阳能电池
Diode Ideality Factor
Shockley-Read Recombination Model
Recombination Current