摘要
用直流反应溅射淀积的AlN薄膜对GaAs功率MESFET进行了钝化。给出了钝化后器件的直流特性。器件的直流参数BVGD、IDSS和Vp在钝化后几乎没有改变。还给出了器件的微波特性。实验证明，AlN钝化的器件性能较好，它是一种很有前途的GaAs钝化材料。
GaAs power MESFET has been passivated by reactively sputteredAlN films. The DC characteristics of the MESFET are given. The DC parametersof the devices such as BVGD,IDSS and Vp have not changed after passivation. The RFcharacteristics are also given. The result is that the devices passivated by AlN havegood DC and RF properties. AlN is useful in GaAs surface passivation.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第2期165-169,共5页
Research & Progress of SSE
