应变p型Si_(1-x)Ge_x层中补偿浅能级杂质的低温陷阱效应

Trapping Effects of the Compensated Shallow Level Dopants in Strained p Si 1-x Ge x Layers at Low Temperatures

研究了ｐ型Ｓｉ１－ｘＧｅｘ应变层中补偿浅能级杂质（Ｐ、Ａｓ、Ｓｂ）的低温陷阱效应。研究发现，１）三种补偿浅能级杂质Ｐ、Ａｓ、Ｓｂ相比较，Ｓｂ的陷阱效应最小，Ａｓ的最大；２）Ｇｅ组份ｘ越大，低温陷阱效应越小；３）补偿浅能级杂质浓度ＮＤ越大，低温陷阱效应越显著，温度越低，陷阱作用越明显。

Trapping effects of the compensated shallow level dopants(P,As,Sb)in strained p Si 1-x Ge x layers at low temperatures are studied.It is found that 1) among the three dopants,Sb has the least trapping effects and As has the largest; 2)the larger the Ge fraction x becomes,the less the low temperature trapping effect is;and 3)the larger the concentration of the compensated shallow level dopant is and the lower the temperature becomes,the more significant the trapping effect is.