砷注入碲镉汞光电二极管及其电学特性的等效分析

As Implanted HgCdTe Photodiodes and Equivalent Analysis of the I-V Characteristics

通过对碲镉汞材料进行Ａｓ注入以及退火，成功地制备了Ｐ－ｏｎ－Ｎ型光伏器件。器件的截止波长为５．５，黑体探测率Ｄ（５００Ｋ，１Ｋ，１００）可达２．１×１０ｃｍＨｚＷ通过对器件的变温电流－电压关系的测量，利用等效电路进行拟合后，我们发现，限制器件优质因子Ｒ。Ａ的主要因素是并联电阻。估计此并联电阻可能由表面漏电和体缺陷引起。

Abstract HgCdTe P-on-N photodiodes were ob- tained by As. implantation and following annealing. The devices showed relatively high performance. The cutoff wavelength is 5. 5m ,and the blackbody