长波光导HgCdTe探测器芯片钝化研究

A Research for the Passivation of the LW PC MCT Pragmatic Detector's Chip

在长波光导碲镉汞器件研制过程中，表面钝化是不可缺少的一个重要环节。在早期，表面钝化只进行阳极氧化处理。通过阳极氧化加ＺｎＳ复合钝化实验，得到了比较可靠的表面钝化层，并制造出了高性能、耐高温环境试验的实用化探测器芯片，文章对表面钝化层进行了分析。

ln the process of developing the LW PC MCT devices .surface passivation is an important and necessary link. ln primary reaseach process , we only make single anodic oxide in actual operation , By growing and depositing ZnS/anodic oxide compound passivation , we obtain a fairly dependable surface passivation layer , and use it to make the chip with high performance and resistant to high temperature for practical detector. ln this paper , the surface pas- sivation layer have been analyse.