在不同热氧化条件下SiO_2-Si结构的电子辐射效应研究

EFFECT OF ELECTRON RADIATION ON SiO2Si SYSTEMWHEN VARYING CONDITIONS OF THE OXIDTION

利用２ＭＶ电子静电加速器，研究了热氧化工艺与ＳｉＯ２Ｓｉ结构的电子辐射效应和辐射损伤机制．结果表明，高能电子辐照ＳｉＯ２Ｓｉ结构引起的ＭＯＳ电容平带电压漂移ΔＶｆｂ与ＳｉＯ２膜厚ｄ２ｏｘ成正比．由Ｐ型硅为衬底或掺氯氧化的ＳｉＯ２Ｓｉ结构对电子辐射较敏感；而由磷处理或干Ｎ２热退火的ＳｉＯ２Ｓｉ结构能有效地降低对电子辐射的敏感性．

The effect of electron radiation and the radiation damage mechanism,when with a 2MV static electric accelerator radiate the SiO2/Si system,has been investigated.The MOS flatband voltage shife ΔVfb that is proportional,to oxide thichness sguared for highenergy electrionic radiction to the SiO2/Si system.The leectionic radiction sensitive is more when with Ptype silicon subsatrutes or C2HCl3 oxidaton.The electionic radition sensitive can decrease when with the phosphorosilicate glass or annealed in N2 ambients for the thermany oxidized silicon.