摘要
运用量子力学半经验分子轨道AM1方法计算乙炔作为生长基在金刚石(111)附氢表面上的吸附和成核过程,提出了两种可能的由乙炔合成金刚石薄膜的成核机理。
The AM1 semi empirical quantum mechanical method has been used to calculate the mechanisms for adsorbing and kernel forming on diamond(111) hydrogenated surface by using acetylene as growth species. The heats of formation(Δ H f ) of each step in kernel forming reaction pathway are obtained. The results show that acetylene can greatly contribute to the kernel forming of diamond and that acetylene is the primary one of diamond growth species.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
1998年第5期789-781,共1页
Chemical Journal of Chinese Universities
基金
国家教育委员会博士点基金
吉林大学理论和计算化学国家重点实验室资助
关键词
金刚石薄膜
乙炔
成核机理
生长基
势垒
合成
Diamond thin film, Acetylene, Kernel forming mechanism, Potential barrier(Ed.: Q, X)