H型栅/源漏非对称结构CMOS在PDSOI标准单元建库中的应用

Application of H-Gate/Asymmetric Source & Drain Structure CMOS in PDSOI Standard Cell Library

基于0.35μmSOI工艺平台,进行PDSOI CMOS标准单元建库技术研究。讨论选用H型栅和源漏非对称结构CMOS建立PDSOI标准单元的优点,根据0.35μm SOI CMOS工艺设计规则进行标准单元库设计,并设计了标准单元测试芯片。

Technique of PDSOI CMOS standard cell library building based on 0.35 μm SOI process is studied. A structure of H-gate and Asymmetric Source ＆ Drain is presented and its advantages are discussed. A library of standard cell is designed according to 0.35 μm SOI CMOS design rule and test chips of standard cell are also designed.