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锗纳米针状结构的制备与表征

Preparation and Characterization of Ge Nanoneedles
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摘要 以锗、二氧化锗为原料,铜片为沉积衬底,通过水热沉积过程制备出了锗纳米针状结构。采用扫描电子显微镜(SEM)、能量色散光谱(EDS)、透射电子显微镜(TEM)及高分辨透射电子显微镜(HRTEM)等检测手段对样品进行了分析与表征。结果表明,样品具有典型的针状特征,其长度大于10μm,由单晶锗和无定形锗氧化物外层所组成。运用金属催化气-液-固和氧化物辅助生长机理,解释了锗纳米针状结构的形成与生长。 Ge nanoneedles were prepared by hydrothermal deposition process using Ge and GeO2 as the starting materials and copper sheet as the deposition substrate. The Ge nanoneedle sample was characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectrum (EDS), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The results demonstrate that the sample is of typical needle structure and composed of monocrystalline Ge and amorphous Ge oxide outer layer,and its length is more than 10 μm. Furthermore, the formation and growth of the Ge nanoneedle are explained by the mechanisms of metal-catalyzed vapor-liquid-solid and oxide-assisted growth.
出处 《稀有金属与硬质合金》 CAS CSCD 北大核心 2009年第2期4-6,33,共4页 Rare Metals and Cemented Carbides
基金 安徽省教育厅自然科学研究资助项目(KJ2007B077)
关键词 锗纳米针 水热沉积 制备 表征 Ge nanoneedle hydrothermal deposition preparation characterization
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参考文献16

  • 1Heath J R,LeGoues F K. A liquid solution synthesis of single crystal germanium quantum wires[J]. Chem Phys Lett, 1993,208 (2) : 262-268.
  • 2Hanrath T, Korgel B. Nucleation and growth of germanium nanowires seeded by organic monolayer-coated gold nanocrystals[J]. J Am Chem Soc, 2002,124 (7) : 1 424- 1 429.
  • 3Hanrath T, Korgel B A. Crystallography and surface faceting of germanium nanowires[J]. Small, 2005,1 (7) : 717 -721.
  • 4裴立宅,赵海生.锗纳米线的制备与生长机理[J].稀有金属与硬质合金,2007,35(3):43-48. 被引量:2
  • 5Dailey J W,Taraci J ,Clement T,et al. Vapor-liquid-solid growth of germanium nanostructures on silicon [J].J Appl Phys,2004,96(12) :7 556-7 567.
  • 6Wang D, Dai H. Low-temperature synthesis of singlecrystal germanium nanowires by chemical vapor deposition[J].Angew Chem Int Ed,2002,41:4 783-4 786.
  • 7Coleman N R B,Ryan K M,Spalding T R,etal. The formation of dimensionally ordered germanium nanowires within mesoporous silica[J].Chem Phys Lett,2001,343: 1-6.
  • 8Han W Q, Wu L J,Zhu Y M,et al. In-situ growth of crystalline Ge nanowires by using nanotuhes as template[J]. Microsc Microanal, 2005,11 (S2) : 1 506-1 507.
  • 9叶好华,叶志镇,黄靖云,吴贵斌,赵炳辉,涂江平,侯山昆.氧化铝模板法制备Ge纳米线[J].Journal of Semiconductors,2003,24(2):173-176. 被引量:9
  • 10Morales A M, Lieber C M. A laser ablation method for the synthesis of crystalline semiconductor nanowires [J]. Science, 1998,279 (15) : 208-211.

二级参考文献45

  • 1Iijima S.Helical microtubules of graphitic carbon.Nature,1991,354:56
  • 2Cheng G S,Zhang L D,Zhu Y,et al.Large-scale synthesis of single crystalline gallium nitride nanowires.Appl Phys Lett,1999,75:2455
  • 3Li Y,Meng G W,Zhang L D,et al.Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties.Appl Phys Lett,2000,76:2011
  • 4Morales A M,Lieber C M.A laser ablation method for the synthesis of crystalline semiconductor nanowires.Science,1998,279:208
  • 5Zhang H Z,Yu D P,Ding Y,et al.Dependence of the silicon nanowire diameter on ambient pressure.Appl Phys Lett,1998,73:3396
  • 6Yu D P,Bai Z G,Ding Y,et al.Nanoscale silicon wires synthesized using simple physical evaporation.Appl Phys Lett,1998,72:3458
  • 7Li M K,Wang C W,Li H L.Synthesis of ordered Sinanowires arrays in porous anodic aluminum oxide templates.Chinese Science Bulletin,2001,46:1793
  • 8Omi H,Ogino T.Self-assembled Ge nanowires grown on Si(113).Appl Phys Lett,1997,71:2163
  • 9Gu G,Burghard M,Kim G T,et al.Growth and electricaltransport of germanium nanowires.J Appl Phys,2001,90:5747
  • 10Zhang Y F,Tang Y H,Wang N,et al.Germanium nanowires sheathed with an oxide layer.Phys Rev B,2000,61:4518

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