期刊文献+

电沉积种子层化学控制生长氧化锌纳米棒和纳米管 被引量:6

Controlled Growth of ZnO Nanorods and Nanotubes by Chemical Method on Electrodeposited Seed Layer
下载PDF
导出
摘要 采用水溶液法在电沉积的ZnO种子层上制备了高度取向的ZnO纳米棒阵列,并通过碱溶液化学腐蚀法获得了ZnO纳米管。对ZnO纳米棒和纳米管的溶液生长和腐蚀过程进行了分析。结果表明,种子层的结构和性能对ZnO纳米棒有着重要的影响,在-700mV电位下沉积的种子层薄膜均匀性好,生长的纳米棒密度大、与基底垂直性好;碱溶液对纳米棒的腐蚀具有选择性,通过控制腐蚀液的浓度和时间,可获得中空的ZnO纳米管。 Highly oriented ZnO nanorod arrays on electrodeposited ZnO-coated seed layers were fabricated by aqueous solution method. The ZnO nanotube arrays could be obtained after chemical etching of as-prepared nanorod arrays using alkaline solution at low temperature. The growth and etching process of nanorods and nanotubes were also analyzed. The results show that the structure and property of seed layers play important roles on the morphology of ZnO nanorods. The seed layer deposited at -700 mV has evenly distributed crystallites, the density of the resultant nanorods is high and ZnO nanorods stand completely perpendicular onto substrates. There was a selective etching of alkaline solution on nanorods. And, the center hollow ZnO nanotubes could be obtained after chemical etching by controlling the concentration of alkaline and etching time.
出处 《无机化学学报》 SCIE CAS CSCD 北大核心 2009年第6期995-999,共5页 Chinese Journal of Inorganic Chemistry
基金 中国博士后科学基金(No.20080440674) 教育部科学技术研究重点项目(No.208008) 天津市高等学校科技发展基金计划项目(No.20071204) 建设部科技计划项目(No.2007-K1-30)资助
关键词 ZNO 纳米棒 纳米管 水溶液法 腐蚀 zinc oxide nanorod nanotube aqueous solution method etching
  • 相关文献

参考文献13

  • 1Ramamoorthy K,Arivanandhan M,Sankaranarayanan K,et al.Mater.Chem.Phys.,2004,85:257-262
  • 2Water W,Chu S Y.Mater.Lett.,2002,55:67-72
  • 3Munizer P,Elena B,Emil R.Microelectr.Eng.,2000,52:425-431
  • 4Kashyout A B,Soliman M,Gamal M E,et al.Mater.Chem.Phys.,2005,90:230-233
  • 5Zayer N K,Greerf R,Rogers K,et al.Thin Solid Films,1999,352:179-184
  • 6Coda C B,Emanetoglu N W,Liang S,et al.J.Appl.Phys.,1999,85:2595-2602
  • 7Fang Z B,Wang Y Y,Peng X P,et al.Mater.Lett.,2003,57:4187-4190
  • 8Covendre K,Boyle D S,OBrien P,et al.A dv.Mater.,2002,14:1221-1224
  • 9Vayssieres L Keis K,Lindquist S,et al.J.Phys.Chem.B,2001,105:3350-3352
  • 10Liu X X,Jin Z G,Bu S J,et al.Mater.Lett.,2005,59:3994-3999

同被引文献69

引证文献6

二级引证文献7

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部