直流电弧自催化合成β-SiC纳米线(英文)

Self-catalytic Synthesis of β-SiC Nanowires by Direct Current Arc Discharge

采用C,Si和SiO2为反应原料,利用直流电弧法制备出长直的β-SiC纳米线。纳米线的直径为100～200nm,长度为10～20μm,并且沿着<111>方向生长。通过X射线衍射(XRD)、扫描电子显微术(SEM)、透射电子显微术(TEM)、拉曼光谱等手段,对β-SiC纳米线进行表征。探讨了β-SiC纳米线自催化气-液-固(VLS)生长机制。

Straight and long β-SiC nanowires were synthesized in direct current arc discharge using a mixture of graphite, silicon, and silicon dioxide as the precursor. The diameter of the nanowires is 100-200 nm, and the length is about 10-20 μm. The axis of the nanowire is preferentially along the 〈111 〉 direction. The morphology and structure of the nanowires were characterized by X-ray diffraction（XRD）, scanning electron microscopy（SEM）, energy dispersive spectroscopy （EDS）, transmission electron microscopy （TEM） and Raman spectroscopy. The β-SiC nanowires are suggested to be formed via a self-catalyzed vapor-liquid-solid growth mechanism.