摘要
本文探讨了在半导体晶闸管(SCR)制造过程中,采用合理的工艺手段,提高SCR最高工作结温,并使之尽量达到理论值的方法.
In the production process of the silicon controlled rectifier (SCR) theway to use reasonable techniques and raise highest junction temperature of SCR is discussed in this paper with a view to reach theretical volue.
关键词
晶闸管
半导体
高温晶闸管
conduct area
snowslade
diffusion
restricted area
impurity
move rate
original feature
Power build
