摘要
研究了CCD电离辐射引起总剂量效应和瞬态电离效应的损伤机理。分析了总剂量效应导致CCD平带电压和阈值电压漂移、表面暗电流密度增大以及饱和输出电压下降的规律和机理。研究了单粒子瞬态电离辐射导致CCD单粒子瞬态电荷产生的机理;研究了瞬态脉冲电离辐射导致CCD信号电荷损失的机理。
It is analyzed that the mechanism on total dose radiation effects and transient ionization radiation effects on CCD which induced by ionization radiation damage effects. Total dose radiation damage induces flatband voltage shift, surface dark current increase, and saturation output voltage decrease. Transient ionization radiation damage induces the generation of single particle transient signal charge, and the loss of signal charge in CCD.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2009年第3期565-570,619,共7页
Nuclear Electronics & Detection Technology
关键词
CCD电离辐射
平带电压
表面暗电流
饱和输出电压
单粒子瞬态电荷
CCD, Ionization radiation, Flatband voltage, Surface dark current, Saturation output voltage, Single particle transient signal charge
