摘要
A two-stage power amplifier operated at 925 MHz was designed and fabricated in Jazz' s 0.35μmSiGe BiCMOS process.It was fully integrated excluding the inductors and the output matching network.Under a single 3.3V supply voltage,the off-chip bonding test results indicated that the circuit has a smallsignal gain of more than 24dB,the input and output reflectance are less than- 24dB and-10dB,re-spectively,and the maximal output power is 23.5 dBm.At output power of 23.1 dBm,the PAE(poweradded efficiency)is 30.2%,the IMD2 and IMD3 are less than- 32 dBc and-46 dBc,respectively.The chip size is 1.27mm ×0.9mm.
A two-stage power amplifier operated at 925 MHz was designed and fabricated in Jazz＇ s 0.35μm SiGe BiCMOS process. It was fully integrated excluding the inductors and the output matching network. Under a single 3.3V supply voltage, the off-chip bonding test results indicated that the circuit has a small signal gain of more than 24dB, the input and output reflectance are less than - 24dB and - 10dB, respectively, and the maximal output power is 23.5 dBm. At output power of 23.1 dBm, the PAE （power added efficiency） is 30.2%, the IMD2 and IMD3 are less than -32 dBc and -46 dBc, respectively. The chip size is 1.27mm × 0.9mm.
基金
Supported by the High Technology Research and Development Programme of China (2006AA03Z418)
