期刊文献+

Effect of a step quantum well structure and an electric-field on the Rashba spin splitting

Effect of a step quantum well structure and an electric-field on the Rashba spin splitting
原文传递
导出
摘要 Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-xAs/Al0.3Ga0.7As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference.The dependence of the spin splitting on the electric field and the well structure,which is controlled by the well width and the step width,is investigated in detail.Without an external electric field,the spin splitting is induced by an interface related Rashba term due to the built-in structure inversion asymmetry.Applying the external electric field to the step QW,the Rashba effect can be enhanced or weakened,depending on the well structure as well as the direction and the magnitude of the electric field.The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field,and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches. Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-xAs/Al0.3Ga0.7As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference.The dependence of the spin splitting on the electric field and the well structure,which is controlled by the well width and the step width,is investigated in detail.Without an external electric field,the spin splitting is induced by an interface related Rashba term due to the built-in structure inversion asymmetry.Applying the external electric field to the step QW,the Rashba effect can be enhanced or weakened,depending on the well structure as well as the direction and the magnitude of the electric field.The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field,and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第6期11-14,共4页 半导体学报(英文版)
基金 supported by the State Key Development Program for Basic Research of China (Nos. 2006CB921607, 2006CB604908) the National Natural Science Foundation of China (No. 60625402)
关键词 Rashba effect step quantum wells electric field INTERFACE Rashba effect step quantum wells electric field interface
  • 相关文献

参考文献18

  • 1Grundler D. Large Rashba splitting in InAs quantum wells due to electron wave function penetration into the barrier layers. Phys Rev Lett, 2000, 84:6074
  • 2Engels G, Lange J, Schapers T, et al. Experimental and theoretical approach to spin splitting in modulation-doped InxGa1-xAs/InP quantum wells for B→0. Phys Rev B, 1997, 55:R1958
  • 3Nitta J, Akazaki T, Takayanagi H. Gate control of spinorbit interaction in an inverted In0.53Ga0.47As/In0.52Al0.48As heterostructure. Phys Rev Lett, 1997, 78:1335
  • 4Datta S, Das B. Electonic analog of the electro-optic modulator. Appl Phys Lett, 1989, 56:665
  • 5Schliemann J, Egues J C, Loss D. Nonballistic spin-field-effect transistor. Phys Rev Lett, 2003, 90:146801
  • 6CartoixaX, Ting D Z Y, Chang Y C. A resonant spin lifetime transistor. Appl Phys Lett, 2003, 83:1462
  • 7Koga T, Nitta J, Takayanagi H. Spin-filter device based on the Rashba effect using a nonmagnetic resonant tunneling diode. Phys Rev Lett, 2002, 88:126601
  • 8Schapers T, Engels G, Lange J, et al. Effect of the heterointerface on the spin splitting in modulation doped InxGa1-xAs/InP quantum wells for B→0. J Appl Phys, 1998, 83:4324
  • 9Sato Y, Kita T, Gozu S, et al. Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In0.75Ga0.25As/In0.75Al0.25As heterojunctions. J Appl Phys, 2001, 89:8017
  • 10Pfeffer P, Zawadzki W. Spin splitting of conduction subbands in Ⅲ-Ⅴ heterostructures due to inversion asymmetry. Phys Rev B, 1998, 59:R5312

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部