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Atomistic simulations of the tensile and melting behavior of silicon nanowires

Atomistic simulations of the tensile and melting behavior of silicon nanowires
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摘要 Molecular dynamics simulations with Stillinger-Weber potential are used to study the tensile and melting behavior of single-crystalline silicon nanowires(SiNWs).The tensile tests show that the tensile behavior of the SiNWs is strongly dependent on the simulation temperature,the strain rate,and the diameter of the nanowires.For a given diameter,the critical load significantly decreases as the temperature increases and also as the strain rate decreases.Additionally,the critical load increases as the diameter increases.Moreover,the melting tests demonstrate that both melting temperature and melting heat of the SiNWs decrease with decreasing diameter and length,due to the increase in surface energy.The melting process of SiNWs with increasing temperature is also investigated. Molecular dynamics simulations with Stillinger-Weber potential are used to study the tensile and melting behavior of single-crystalline silicon nanowires(SiNWs).The tensile tests show that the tensile behavior of the SiNWs is strongly dependent on the simulation temperature,the strain rate,and the diameter of the nanowires.For a given diameter,the critical load significantly decreases as the temperature increases and also as the strain rate decreases.Additionally,the critical load increases as the diameter increases.Moreover,the melting tests demonstrate that both melting temperature and melting heat of the SiNWs decrease with decreasing diameter and length,due to the increase in surface energy.The melting process of SiNWs with increasing temperature is also investigated.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第6期20-24,共5页 半导体学报(英文版)
基金 supported by the National Natural Science Foundation of China(No.10772062)
关键词 Si nanowires molecular dynamics tensile behavior melting behavior Si nanowires molecular dynamics tensile behavior melting behavior
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