摘要
In order to investigate the effects of a back surface field（BSF） on the performance of a p-doped amorphous silicon（p-a-Si：H）/n-doped crystalline silicon（n-c-Si） solar cell,a heterojunction solar cell with a p-a-Si：H/n-c-Si/n^＋-a-Si：H structure was designed.An n^＋-a-Si：H film was deposited on the back of an n-c-Si wafer as the BSF.The photovoltaic performance of p-a-Si：H/n-c-Si/n^＋-a-Si：H solar cells were simulated.It was shown that the BSF of the p-a-Si：H/n-c-Si/n^＋-a-Si：H solar cells could effectively inhibit the decrease of the cell performance caused by interface states.
In order to investigate the effects of a back surface field（BSF） on the performance of a p-doped amorphous silicon（p-a-Si：H）/n-doped crystalline silicon（n-c-Si） solar cell,a heterojunction solar cell with a p-a-Si：H/n-c-Si/n^＋-a-Si：H structure was designed.An n^＋-a-Si：H film was deposited on the back of an n-c-Si wafer as the BSF.The photovoltaic performance of p-a-Si：H/n-c-Si/n^＋-a-Si：H solar cells were simulated.It was shown that the BSF of the p-a-Si：H/n-c-Si/n^＋-a-Si：H solar cells could effectively inhibit the decrease of the cell performance caused by interface states.
基金
supported by the Natural Science Foundation of Jiangxi Province, China (Nos.0612025, 2007GZW0787)
the Education Bureau of Jiangxi Province, China (No. [2007]218)
