摘要
The influence of electron irradiation on the switching speed in insulated gate bipolar transistors（IGBT） with different epitaxial layer thicknesses is discussed in detail.The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer.However,there is no obvious difference between the ratios of the fall time after irradiation to those before irradiation for different epitaxial layer thicknesses.The increase in switching speed of the IGBT is accompanied by an increase in the forward drop,and a trade-off curve between forward voltage drop and fall time of IGBT is presented.
The influence of electron irradiation on the switching speed in insulated gate bipolar transistors（IGBT） with different epitaxial layer thicknesses is discussed in detail.The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer.However,there is no obvious difference between the ratios of the fall time after irradiation to those before irradiation for different epitaxial layer thicknesses.The increase in switching speed of the IGBT is accompanied by an increase in the forward drop,and a trade-off curve between forward voltage drop and fall time of IGBT is presented.
