摘要
对于用Cl2/Ar和Cl2/CH4/H2感应耦合等离子体(ICP)刻蚀InP/InGaAs多层膜进行了研究。发现用Cl2/Ar刻蚀InP/InGaAs时InP侧壁内切,在InP和InGaAs界面存在侧壁不连续问题。而用Cl2/CH4/H2刻蚀时,两层侧壁是平整连续的,且刻蚀区表面的粗糙度也比较小。分析了两种气体组合的刻蚀机理,对上述实验现象给出了解释。
The study was taken between the etchings of InP/InGaAs heterostructure by Cl2/Ar and Cl2/CH4/H2 ICP, respectively. It is found that the Cl2/Ar etched sidewall of InP layer inclined toward inside, which lead the sidewall of InP layer and InGaAs discontinuous. In the Cl2/CH4/H2 etching, however, the sidewall is continual and all the etched areas are much smoother. The mechanism of the two combinations in etching process was also analyzed and a reasonable explanation is given in this paper.
出处
《半导体光电》
CAS
CSCD
北大核心
2009年第3期396-399,共4页
Semiconductor Optoelectronics
基金
中国电子科技集团公司CCD研发中心基础技术基金项目(62501100615)
国家自然科学基金项目(60676052)
